Cryogenic Pressure Transducer-Thin-Film Solution

Cryogenic Pressure Transducer-EST386, is kind of Sputtered Thin Film Pressure Transducer, that was designed for cryogenic service; it can operate in temperatures from -196°C to +85°C (-320°F to +138°F.)

Yet, even in these difficult temperatures, it provides outstanding accuracy, long-term calibration stability and reliability. Static accuracy can be ±0.2%, and thermal zero and sensitivity shifts over the compensated range of -196°C to +27°C (-320°F to +80°F) are less than ±0.01%/°F.

The all-welded stainless-steel pressure cavity and double-isolated case ensures reliability in the tough environments normal to cryogenic service.

Features & Benefits

Range: 0~0.1bar~2000bar
Accuracy: ±0.2%F. S |: ±0.5%F. S
Sensing: Thin-Film
Stability: ±0.2%F. S
All-Welded Stainless-Steel
Temperature for Cryogenic Industry: -196℃~100℃

Applications

Cooling Tanks
Cryogenic Storage Tanks
Liquid Oxygen/ Nitrogen/Hydrogen/Helium
Pressure Cryogenic Measurement of Propellants
Cryogenic Storage Tanks for Aerospace, Aviation, Ships

Data Comparison for Thin Film Pressure Transmitters

Model	EST380	EST380S	EST383	EST380S-C	EST386
Sensing	Thin Film	Thin Film	Thin Film	Thin Film	Thin Film
Feature	High Temp. 🔥	High Temp. 🔥	High Temp. 🔥	Cryogenic ❄️	Cryogenic ❄️
Range (min)	0-4bar	0-10bar	0-10bar	0-1bar	0-1bar
Range (max)	0-2000bar	0-3000bar	0-800bar	0-2000bar	0-2000bar
Accuracy	0.25%	0.25%	0.25%	0.25%	0.25%
	0.5%	0.5%	0.5%	0.5%	0.5%
	0-5V	0-5V	0-5V	0-5V	0-5V
Output Signal	0-10V	0-10V	0-10V	0-10V	0-10V
Output Signal	4-20mA	4-20mA	4-20mA	4-20mA	4-20mA
Working Temperature	-40℃~150℃	-40℃~300℃	-40℃~150℃	-196℃~85℃	-196℃~100℃
Electrical Connection	DIN43650	DIN43650	DIN43650	DIN43650	DIN43650
Electrical Connection	M12	M12	M12	M12	M12
Process Connection	M20*1.5	M20*1.5	M20*1.5	M20*1.5	M20*1.5
	G1/2, G1/4	G1/2, G1/4	G1/2, G1/4	G1/2, G1/4	G1/2, G1/4
	NPT1/2, NPT1/4	NPT1/2, NPT1/4	NPT1/2, NPT1/4	NPT1/2, NPT1/4	NPT1/2, NPT1/4
Datasheet	Download	Download	Download	Download	Download

Technology

Piezoresistive based transducers rely on the piezoresistive effect which occurs when the electrical resistance of a material changes in response to applied mechanical strain. In metals, this effect is realized when the change in geometry with applied mechanical strain results in a small increase or decrease in the resistance of the metal. The piezoresistive effect in silicon is due primarily to changes at the atomic level and is approximately two orders of magnitude larger than in metals.

Sputter deposited thin film pressure sensor is a kind of piezoresistive pressure sensors, difference exist that the thin-film sensor consists of a resistor pattern that is vaporized or sputter-deposited onto the force-summing element (the measuring diaphragm). In some transducers the resistors are not directly mounted on the diaphragm but are on a beam linked to the diaphragm by a push rod.