ESS501I Ceramic Thick Film Pressure Sensor Module
Based on ESS501 both monolithic and flush diaphragm pressure sensor element, ESS501I/V/IIC pressure sensor module is made with a ceramic base cell and a flush diaphragm and work following the piezoresistive principle. The Wheatstone bridge is screen printed on one side of the ceramic diaphragm which is, in turn, glued to the sensor’s body.
The bridge faces the inside where a cavity is made. Signal conditioning electronics are added to generate 0.5…4.5 V ratiometric output, current loop 4…20 mA or 0…10 V non ratiometric output and also I2C digital output signal.
- 0.5-4.5V
- 4-20mA
- I2C
Pressure and temperature calibration are done electronically with the on-board ASIC and can be performed in bar or in psi. Electronics provide offset and span correction when temperature changes. Aging detection and compensation are constantly performed. This new method guarantees good precision and long-term stability.
Due to the excellent chemical immunity of the the Al2O3 ceramic, the ESS501I//V/IIC pressure sensor module are suitable for nearly all aggressive media.
Features & Benefits
- Pressure range 0.5bar‐50bar
- 0.5-4.5V | 4-20mA | I2C output available
- Excellent resistance to corrosion and abrasion
- Absolute measurement available
- Thermally compensated
- Extended customization & choice of measuring ranges
Applications
- Cooling equipment & A/C system
- Automotive and vehicle
- Industrial process control
- HVAC system
- Refrigeration equipment
- Air conditioning unit
ESS 5 Series Key Features
| Technical Characteristics | |
|---|---|
| Parameter | Description |
| Sensor type | Flush diaphragm, absolute (A), gauge (R) or sealed gauge (S) |
| Technology | Ceramic Piezoresistive |
| Diaphragm material | Ceramic Al2O3 96% (standard), 99.6% or sapphire (on request) |
| Weight | ≤ 8g (ceramic cell only) |
| Response time | ≤ 1ms |
| Supply voltage | 2...36Vdc |
| Offset | ‐ 0.1 ± 0.1 mv/v(Other nominal values available on request) |
| Current cons. | ≤ 3mA @ 10V |
| Operating | -40...+85℃ (-40 °F...+185 °F) |
| Storage temperature | -40...+125℃ (-40 °F...+257 °F) |
| Impedance | 11 ± 30%kΩ |
| Technical Characteristics | ||||||||
|---|---|---|---|---|---|---|---|---|
| Nominal pressure FSO | bar | 0.5 | 1 | 2 | 5 | 10 | 20 | 50 |
| Overload pressure | bar | 1 | 2 | 4 | 10 | 15 | 35 | 100 |
| Burst pressure | bar | 2 | 3 | 6 | 15 | 25 | 65 | 120 |
| Vacuum capability | bar | -0.1 | -0.5 | -1 | -1 | -1 | -1 | -1 |
| Type | - | R | A/R/S | A/R/S | A/R/S | A/R/S | A/R/S | A/R/S |
| Total thickness | mm | 6.15 | 6.17 | 6.23 | 6.30 | 6.35 | 6.55 | 6.70 |
| Sensitivity | mv/v | 1.4-2.4 | 2.0-3.6 | 2.3-3.5 | 2.3-4.0 | 3.1-5.5 | 2.4-4.0 | 4.0-6.0 |
| Accuracy | %/fs | 0.4/0.9 | 0.3/0.9 | 0.3/0.6 | 0.2/0.4 | 0.2/0.5 | 0.2/0.5 | 0.2/0.5 |
| Thermal offset shift(typ./max.) | %/fs/k | ± 0.005 / ± 0.040 | 25 °C...85 °C | (77 °F...185 °F) | ||||
| Thermal span shift | %/fs/k | ≤ ± 0.010 | 0 °C...70 °C | ≤ ± 0.012 | -25 °C...0 °C / 70 °C...85 °C | |||
| Reliability tests | - | 1000 hours @85 °C (185 °F) & 85 %RH | 500 thermal shocks ‐40°C...+150 °C (‐40 °F... +302 °F) | |||||
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